GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

被引：100

作者：

Hutin, Louis ^{[1
]}

Le Royer, Cyrille ^{[1
]}

Damlencourt, Jean-Francois ^{[1
]}

Hartmann, Jean-Michel ^{[1
]}

Grampeix, Helen ^{[1
]}

Mazzocchi, Vincent ^{[1
]}

Tabone, Claude ^{[1
]}

Previtali, Bernard ^{[1
]}

Pouydebasque, Arnaud ^{[1
]}

Vinet, Maud ^{[1
]}

Faynot, Olivier ^{[1
]}

机构：

[1] CEA, Elect & Informat Technol Lab, French Atom Energy Commiss, LETI,MINATEC, F-38054 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期

关键词：

Ge enrichment; germanium; germanium-on-insulator (GeOI); MOSFET; SILICON-GERMANIUM; PERFORMANCE;

D O I：

10.1109/LED.2009.2038289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present in this letter the most aggressive dimensions reported to date in Ge-channel transistors: pMOSFETs with 30-nm gate length on ultrathin germanium-on-insulator substrates (T-Ge = 25 nm). By improving both the Ge-enrichment technique and the transistor fabrication process, we demonstrate devices with controlled threshold voltage (V-th) and excellent short-channel effects. Moreover, the low defectivity and the very low thickness of the Ge film lead to a record drain OFF-state leakage for Ge-channel devices (< 1 nA/mu m at V-DS = -1 V) and thus, to the best ON-state to OFF-state current ratio (I-ON/I-OFF similar to 5 x 10(5)), even at L-g = 55 nm.

引用

页码：234 / 236

页数：3

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