Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

被引：22
作者：
Geng, Yang [1 ]
Yang, Wen [1 ]
Lu, Hong-Liang [1 ]
Zhang, Yuan [1 ]
Sun, Qing-Qing [1 ]
Zhou, Peng [1 ]
Wang, Peng-Fei [1 ]
Ding, Shi-Jin [1 ]
Zhang, David Wei [1 ]
机构：
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Inst Adv Nanodevices, Shanghai 200433, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期
基金：
中国国家自然科学基金;
关键词：
High mobility; atomic layer deposition; ZnO; hydroxyl residuals; thin-film transistors (TFTs); TEMPERATURE;
D O I：
10.1109/LED.2014.2365194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impacts of postdeposition annealing in O-2 on the electrical performance of atomic-layer-deposited ZnO thin-film transistors (TFTs) have been investigated. The TFTs are fabricated on transparent quartz substrates with Al2O3 dielectrics, ZnO active layers, and Cr/Au electrodes. The best field-effect mobility of 21.3 cm(2)/Vs and a large ON/OFF current ratio of 10(7) are obtained under 400 degrees C annealing treatment in O-2. Furthermore, analysis indicates that reduction of OH bonds in both ZnO and Al2O3 layers is the key issue to achieve the excellent properties.
引用
收藏
页码：1266 / 1268
页数：3
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