Experimental investigation of 4H-SiC bulk crystal growth

被引：8
|
作者：
Chourou, K
Anikin, M
Bluet, JM
Lauer, V
Guillot, G
Camassel, J
Juillaguet, S
Chaix, O
Pons, M
Madar, R
机构：
[1] CNRS, INPG, UMR 5628, LMGP, F-38402 St Martin Dheres, France
[2] Inst Natl Sci Appl, CNRS, UMR 5511, LPM, F-69621 Villeurbanne, France
[3] Univ Montpellier 2, GES, F-34095 Montpellier, France
[4] UJF, INPG, UMR 5614 CNRS, LTPCM, F-38402 St Martin Dheres, France
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
sublimation growth; polytypism; micro-Raman; wide band gap semiconductors;
D O I：
10.4028/www.scientific.net/MSF.264-268.17
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
4H-SiC single crystal ingots up to 1 inch in diameter have been grown by the Modified Lely Method. A growth sequence is proposed. The polytype study by Raman spectroscopy has shown that, in our configuration, 4H ingots could be reproducibly obtained on the (<000(1)over bar>)C face of a 4H-SiC seed. The ingot contamination by transition metals (Ti, V) is discussed in the light of low temperature photoluminescence.
引用
收藏
页码：17 / 20
页数：4
相关论文
共 50 条
  • [21] Experimental determination of electron drift velocity in 4H-SiC p+-n-n+ avalanche diodes
    Vassilevski, KV
    Zekentes, K
    Zorenko, AV
    Romanov, LP
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (10) : 485 - 487
  • [22] Triple Shockley type stacking faults in 4H-SiC epilayers
    Feng, Gan
    Suda, Jun
    Kimoto, Tsunenobu
    APPLIED PHYSICS LETTERS, 2009, 94 (09)
  • [23] High quantum efficiency deep ultraviolet 4H-SIC photodetectors
    Sampath, A. V.
    Rodak, L. E.
    Chen, Y.
    Zhou, Q.
    Campbell, J. C.
    Shen, H.
    Wraback, M.
    ELECTRONICS LETTERS, 2013, 49 (25) : 1629 - 1630
  • [24] Micro-Raman characterization of 4H-SiC stacking faults
    Piluso, N.
    Camarda, M.
    Anzalone, R.
    La Via, F.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 378 - 381
  • [25] Dicarbon antisite defect in n-type 4H-SiC
    Umeda, T.
    Isoya, J.
    Morishita, N.
    Ohshima, T.
    Janzen, E.
    Gali, A.
    PHYSICAL REVIEW B, 2009, 79 (11)
  • [26] The origin of triangular surface defects in 4H-SiC CVD epilayers
    Zhou, WL
    Pirouz, P
    Powell, JA
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 417 - 420
  • [27] Transition metal swift heavy ion implantation on 4H-SiC
    Ali, A. Ashraf
    Kumar, J.
    Ramakrishnan, V.
    Asokan, K.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 370 : 101 - 106
  • [28] Optical investigation of stacking faults and micro-crystalline inclusions in-low-doped 4H-SiC layers
    Juillaguet, S
    Balloud, C
    Pernot, J
    Sartel, C
    Soulière, V
    Camassel, J
    Monteil, Y
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 577 - 580
  • [29] Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport
    Ohtani, Noboru
    Katsuno, Masakazu
    Nakabayashi, Masashi
    Fujimoto, Tatsuo
    Tsuge, Hiroshi
    Yashiro, Hirokatsu
    Aigo, Takashi
    Hirano, Hosei
    Hoshino, Taizo
    Tatsumi, Kohei
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (06) : 1475 - 1481
  • [30] Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties
    Bickermann, Matthias
    Filip, Octavian
    Epelbaum, Boris M.
    Heimann, Paul
    Feneberg, Martin
    Neuschl, Benjamin
    Thonke, Klaus
    Wedler, Elke
    Winnacker, Albrecht
    JOURNAL OF CRYSTAL GROWTH, 2012, 339 (01) : 13 - 21
12345