Temperature dependent fracture toughness of glass frit bonding layers

被引:9
作者
Noetzold, Kerstin [1 ]
Dresbach, Christian [2 ]
Graf, Jurgen [1 ]
Boettge, Bianca [2 ]
机构
[1] Robert Bosch GmbH CR ARY3, D-70839 Gerlingen, Germany
[2] Fraunhofer Inst Mech Mat, D-06120 Halle, Germany
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2010年 / 16卷 / 07期
关键词
Residual Stress; Energy Release Rate; Crack Path; Glass Frit; Bonding Layer;
D O I
10.1007/s00542-010-1037-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Glass frit bonding is an important technology for the hermetical encapsulation of microsensors. During manufacturing processes and in application the bonding layer is repeatedly exposed to temperature changes. Therefore a meaningful stability assessment must consider possible temperature dependent fracture toughness parameters. This work shows that the influence of temperature changes on the fracture toughness depends on whether the bonding layer is subjected to externally pure tensile or combined tensile and shear loading. The reasons for this effect are discussed by use of finite element simulations. Two different kinds of cracks are compared with regard to the residual stresses that result from the wafer bonding process. These residual stresses have a high influence on the loading conditions at the crack tip, when the crack is kinking into the glass frit material. However, the influence of residual stresses on an interfacial crack that propagates parallel to the plane of the bonding layer is almost negligible.
引用
收藏
页码:1243 / 1249
页数:7
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