Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

被引：21

作者：

Kondratenko, S. V. ^{[1
]}

Vakulenko, O. V. ^{[1
]}

Mazur, Yu. I. ^{[2
]}

Dorogan, V. G. ^{[2
]}

Marega, E., Jr. ^{[2
]}

Benamara, M. ^{[2
]}

Ware, M. E. ^{[2
]}

Salamo, G. J. ^{[2
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Dept Phys, UA-01601 Kiev, Ukraine

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 19期

关键词：

PERSISTENT PHOTOCONDUCTIVITY; ENERGY-RELAXATION; GAAS; DEFECT; INAS; CONDUCTIVITY; ANTISITE; GAP; EL2;

D O I：

10.1063/1.4902311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83eV to 1.0eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media. (C) 2014 AIP Publishing LLC.

引用

页数：11

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