Near band edge optical properties of the TlInS2 and TlGaS2 incommensurate ferroelectrics

被引:0
作者
Mamedov, N [1 ]
Iida, S
Matsumoto, T
Uchiki, H
Tanaka, Y
机构
[1] Azerbaijan Acad Sci, Inst Phys, Baku 370143, Azerbaijan
[2] Nagaoka Univ Technol, Nagaoka, Niigata 94021, Japan
来源
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Near band edge optical absorption is investigated in T1InS(2) and T1GaS(2) incommensurate ferroelectricsis over the temperature region 20-300K. Both materials are found to be remarkable in the fact of the existence of an exciton spectrum. In T1InS(2) the temperature dependence of the exciton energy is certainly mirrors the successive phase transitions taking place in the material and the description in terms of incommensurate phase transition is quite relevant to this case. In T1GaS(2) the temperature dependence of the exciton energy is not seemingly affected by phase transitions and the commonly used description in terms of the lattice deformation and exciton-phonon interaction effect on exciton levels is still sufficient. The deformation potential is estimated to be similar to 4eV.
引用
收藏
页码:899 / 902
页数:4
相关论文
共 50 条
[21]   Low-temperature X-ray studies of TlInS2, TlGaS2, and TlGaSe2 single crystals [J].
Sheleg A.U. ;
Shautsova V.V. ;
Hurtavy V.G. ;
Mustafaeva S.N. ;
Kerimova E.M. .
Sheleg, A. U., 1600, Izdatel'stvo Nauka (07) :1052-1055
[22]   OPTICAL PHONONS IN TLGAS2 [J].
KHALAFOV, ZD ;
GASANLY, NM ;
SARDARLY, RM .
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1977, (02) :151-154
[23]   Coexistence of Indirect and Direct Optical Transitions, Refractive Indices, and Oscillator Parameters in TlGaS2, TlGaSe2, and TlInS2 Layered Single Crystals [J].
Gasanly, N. M. .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 57 (01) :164-168
[24]   The Incommensurate Phase Transformation in TlInS2 Ferroelectric [J].
Salnik, A. ;
Gololobov, Yu. P. ;
Borovoy, N. A. .
FERROELECTRICS, 2015, 484 (01) :62-68
[25]   OPTICAL PHONONS IN LAYERED TLGAS2, BETA-TLINS2 AND TLGASE2 CRYSTALS [J].
MAVRIN, BN ;
STERIN, KE ;
GASANLY, NM ;
KHALADOV, ZR ;
SALAEV, EY ;
ALLAKHVERDIEV, KR ;
SARDALY, RM .
FIZIKA TVERDOGO TELA, 1977, 19 (10) :2960-2963
[26]   Optical and photoelectrical properties of the TlGaS2 ternary compound [J].
Kalkan, N ;
Kalomiros, JA ;
Hanias, M ;
Anagnostopoulos, AN .
SOLID STATE COMMUNICATIONS, 1996, 99 (06) :375-379
[27]   PHASE-DIAGRAMS OF LAYERED SEMICONDUCTORS TLINS2, TLGAS2 AND TLGASE2 AT HYDROSTATIC-PRESSURE TO 1.2 GPA [J].
ALLAKHVERDIEV, KR ;
PONYATOVSKII, EG ;
SHARIFOV, YN ;
MAMEDOV, TG ;
PERESADA, GI .
FIZIKA TVERDOGO TELA, 1985, 27 (03) :927-928
[28]   OPTICAL-PROPERTIES OF TLINS2 SINGLE-CRYSTALS NEAR THE FUNDAMENTAL ABSORPTION-EDGE [J].
ABUTALYBOV, GI ;
ABDULLAEVA, SG ;
ZEINALOV, NM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11) :1348-1349
[29]   TL-203 AND TL-205 NMR IN THE TERNARY LAYERED SEMICONDUCTORS TLINS2, TLGAS2 AND TLGASE2 [J].
PANICH, AM ;
GABUDA, SP ;
MAMEDOV, NT ;
ALIEV, SN .
FIZIKA TVERDOGO TELA, 1987, 29 (12) :3694-3696
[30]   HIGH-PRESSURE RAMAN-STUDY OF THE TERNARY CHALCOGENIDES TLGAS2, TLGASE2, TLINS2, AND TLINSE2 [J].
HENKEL, W ;
HOCHHEIMER, HD ;
CARLONE, C ;
WERNER, A ;
VES, S ;
VONSCHNERING, HG .
PHYSICAL REVIEW B, 1982, 26 (06) :3211-3221