Multi-Gate FinFET Mixer Variability Assessment Through Physics-Based Simulation

被引:18
作者
Bughio, A. M. [1 ]
Guerrieri, S. Donati [1 ]
Bonani, F. [1 ]
Ghione, G. [1 ]
机构
[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy
关键词
FinFET; sensitivity; mixer; INSIGHTS; SOI;
D O I
10.1109/LED.2017.2717460
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, we show that innovative physics-based simulations can be used for a comprehensive analysis of RF stages subject to random variations of technological parameters, including the computation of the average (deterministic) RF performance along with their statistical deviation. The variability analysis is addressed by means of the recently developed physics-based sensitivity analysis of AC parameters through Green's functions. To demonstrate the technique, we address the analysis of a FinFET mixer exploiting an innovative independent gates topology, showing that a careful design allows to maximize the mixer conversion gain, while minimizing its variability versus severalphysical parameters, such as the gate length, oxide thickness, and fin width.
引用
收藏
页码:1004 / 1007
页数:4
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