Characterization of single-wavelength optically pumped GaInAsP/InP vertical-cavity surface-emitting lasers with dielectric mirrors

In this study, the lasing characteristics of optically pumped vertical-cavity surface-emitting lasers (VCSELs) with dielectric mirrors, which are a fundamental structure of our proposed tunable VCSELs, were investigated. Firstly, the design and fabrication of single-wavelength GaInAsP/InP VCSELs without a tuning mechanism are described. The GaInAsP nine-quantum-well QW) active region and pump light-absorption region were grown on an InP substrate by metal-organic chemical vapor deposition (MOCVD). SiO2/TiO2 or a-Si/SiO2 dielectric distributed Bragg reflectors (DBRs) were deposited on both sides of a thin cavity formed by etching of the InP substrate. Continuous-wave operation was observed at room temperature. The lowest threshold pump power was 1.8 mW for a 0.98 mum pump light, which corresponds to an equivalent threshold current density of 710 A/cm(2). The thermal and polarization characteristics of the fabricated devices are also discussed.