Magneto-Transport Properties of Insulating Bulk States in Bi(111) Films

被引：3

作者：

Pang Fei ^{[1
,2
]}

机构：

[1] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China

[2] Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 02期

关键词：

FIELD;

D O I：

10.1088/0256-307X/32/2/027402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Magneto-transport properties of insulating bulk states in Bi(111) films are systematically investigated under the parallel field (B-parallel to). We find that the magnetotransport of the B-parallel to field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance (MR) up to 20% in the B-parallel to field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR(B-parallel to) from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 10 nm, the positive MR(B-parallel to) is induced by weak anti-localization from the surface states.

引用

页数：4

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