Electrical conductivity of dense, bulk silicon-oxycarbide ceramics

被引：51
作者：
Kim, Kwang Joo [1 ]
Eom, Jung-Hye [2 ]
Kim, Young-Wook [2 ]
Seo, Won-Seon [3 ]
机构：
[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
[2] Univ Seoul, Dept Mat Sci & Engn, Funct Ceram Lab, Seoul 130743, South Korea
[3] Korea Inst Ceram Engn & Technol, Div Energy & Environm, Seoul 153801, South Korea
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2015年 / 35卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
Silicon-oxycarbide; Electrical properties; Graphite; Hot-pressing; POLYMER-DERIVED CERAMICS; MECHANICAL CHARACTERIZATION; PRECERAMIC POLYMERS; SIOC CERAMICS; PART II; GLASSES; PYROLYSIS; BEHAVIOR; CARBON; NANOCOMPOSITES;
D O I：
10.1016/j.jeurceramsoc.2014.12.007
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effects of sintering temperature on the electrical conductivity of dense, bulk SiOC ceramics were investigated in polysiloxane-derived SiOC ceramics prepared by a conventional ceramic processing route. The electrical conductivity of the SiOC ceramics increased with increasing sintering temperature between 1450 degrees C and 1650 degrees C. Raman spectroscopy and high-resolution transmission electron microscopy revealed that the SiOC ceramics contained graphitic species (nanocrystalline graphite/turbostratic carbon) and nano-crystalline SiC grains that were precipitated during the fabrication process. The increase in the electrical conductivity is attributable to an increase in the sp(2) carbon bonding portion within a carbon cluster as the sintering temperature increases. The SiOC ceramics sintered at 1650 degrees C exhibited an electrical conductivity as high as 7 Omega(-1) cm(-1) at room temperature. The electrical conductivity of SiOC ceramics sintered at 1550 degrees C was similar to 0-1 Omega(-1) cm(-1) at 4K and similar to 2.0 Omega(-1) cm(-1) at 300 K. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1355 / 1360
页数：6
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