Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

被引：37

作者：

Tournié, E ^{[1
]}

Pinault, MA ^{[1
]}

Vézian, S ^{[1
]}

Massies, J ^{[1
]}

Tottereau, O ^{[1
]}

机构：

[1] Ctr Rech Hetero Epitaxie & Applicat, CNRS, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 14期

关键词：

D O I：

10.1063/1.1314295

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated as-grown Ga1-xInxNyAs1-y/GaAs quantum-well heterostructures (QWHs) prepared by solid-source molecular-beam epitaxy (SS-MBE). We show that the QWH properties appear to depend strongly on the growth technique and that SS-MBE emerges as a technique of choice for growing these QWHs. We demonstrate photoluminescence emission at wavelength as long as 1.43 mu m at 295 K, and up to 1.68 mu m at 10 K. This shows that development of 1.55 mu m optoelectronics based on the Ga1-xInxNyAs1-y/GaAs materials system may now be reasonably thought of. (C) 2000 American Institute of Physics. [S0003-6951(00)02140-9].

引用

页码：2189 / 2191

页数：3

共 17 条

[1] Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition [J].

Bhat, R ;

Caneau, C ;

Salamanca-Riba, L ;

Bi, W ;

Tu, C .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :427-437

[2] High power CW operation of InGaAsN lasers at 1.3μm [J].

Egorov, AY ;

Bernklau, D ;

Livshits, D ;

Ustinov, V ;

Alferov, ZI ;

Riechert, H .

ELECTRONICS LETTERS, 1999, 35 (19) :1643-1644

[3] Nonlinear dependence of N incorporation on In content in GaInNAs [J].

Friedman, DJ ;

Geisz, JF ;

Kurtz, SR ;

Olson, JM ;

Reedy, R .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :438-443

[4] Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) [J].

Grandjean, N ;

Massies, J ;

Leroux, M .

PHYSICAL REVIEW B, 1996, 53 (03) :998-1001

[5] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].

Höhnsdorf, F ;

Koch, J ;

Leu, S ;

Stolz, W ;

Borchert, B ;

Druminski, M .

ELECTRONICS LETTERS, 1999, 35 (07) :571-572

[6] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].

Kondow, M ;

Uomi, K ;

Niwa, A ;

Kitatani, T ;

Watahiki, S ;

Yazawa, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1273-1275

[7] Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property [J].

Miyamoto, T ;

Takeuchi, K ;

Kageyama, T ;

Koyama, F ;

Iga, K .

JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) :67-72

[8] CBE and MOCVD growth of GaInNAs [J].

Miyamoto, T ;

Kageyama, T ;

Makino, S ;

Schlenker, D ;

Koyama, F ;

Iga, K .

JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) :339-344

[9] 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers [J].

Nakahara, K ;

Kondow, M ;

Kitatani, T ;

Larson, MC ;

Uomi, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (04) :487-488

[10]

PANKOVE JI, 1991, SEMICONDUCTORS SEMIM, V34

← 1 2 →