Quasi-phase-matched difference frequency generation (8-13 μm) in an isotropic semiconductor using total reflection

被引：10

作者：

Haïdar, R ^{[1
]}

Kupecek, P ^{[1
]}

Rosencher, E ^{[1
]}

Triboulet, R ^{[1
]}

Lemasson, P ^{[1
]}

机构：

[1] Off Natl Etud & Rech Aerosp, Dept Mesures Phys, F-91761 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 08期

关键词：

D O I：

10.1063/1.1557326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the quasi-phase-matched difference frequency generation in an isotropic semiconductor (zinc selenide) using total internal reflection. We made use of large Fresnel birefringence at reflection between the signal and idler outputs of an optical parametric oscillator. Large tunability (between 8 and 13 mum) is demonstrated. Agreement between theoretical expectation and experimental results is excellent. (C) 2003 American Institute of Physics.

引用

页码：1167 / 1169

页数：3

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