Low-frequency noise measurement-based reliability testing of VLSI interconnects with different geometry

被引：2
作者：
Rawat, KS [1 ]
Massiha, GH [1 ]
机构：
[1] Elizabeth City State Univ, Dept Technol, Elizabeth City, NC USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 12期
关键词：
low-frequency noise; metal thin films; noise measurement system; noise spectral density; reliability; very large-scale integration (VLSI) interconnects;
D O I：
10.1109/LED.2004.838620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise measurements were performed on thin metallic very large-scale integration (VLSI) interconnects of three different geometries. These measurements were carried out under stressing current densities between 1.0 x 10(5) A/cm(2) and 2.2 x 10(6) A/cm(2) at different ambient temperatures up to 280degreesC, in order to investigate the dependence of low-frequency noise on the geometrical shape of the VLSI interconnects. The behavior of these samples under these conditions is analyzed in this letter.
引用
收藏
页码：781 / 783
页数：3
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