Perspective: New process technologies required for future devices and scaling

被引:152
作者
Clark, R. [1 ]
Tapily, K. [1 ]
Yu, K. -H. [1 ]
Hakamata, T. [1 ]
Consiglio, S. [1 ]
O'Meara, D. [1 ]
Wajda, C. [1 ]
Smith, J. [1 ]
Leusink, G. [1 ]
机构
[1] Amer LLC, TEL Technol Ctr, 255 Fuller Rd,Suite 244, Albany, NY 12203 USA
来源
APL MATERIALS | 2018年 / 6卷 / 05期
关键词
ATOMIC LAYER DEPOSITION; VAPOR-DEPOSITION; INTEGRATION; MOSFETS; RU;
D O I
10.1063/1.5026805
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This paper presents an overview and perspective on processing technologies required for continued scaling of leading edge and emerging semiconductor devices. We introduce the main drivers and trends affecting future semiconductor device scaling and provide examples of emerging devices and architectures that may be implemented within the next 10-20 yr. We summarize multiple active areas of research to explain how future thin film deposition, etch, and patterning technologies can enable 3D (vertical) power, performance, area, and cost scaling. Emerging and new process technologies will be required to enable improved contacts, scaled and future devices and interconnects, monolithic 3D integration, and new computing architectures. These process technologies are explained and discussed with a focus on opportunities for continued improvement and innovation. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
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收藏
页数:12
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