Carbon nanotube arrays on silicon substrates and their possible application

被引：73

作者：

Fan, SS ^{[1
]}

Liang, WJ

Dang, HY

Franklin, N

Tombler, T

Chapline, M

Dai, HJ

机构：

[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

PHYSICA E | 2000年 / 8卷 / 02期

基金：

中国国家自然科学基金;

关键词：

carbon nanotubes; nanotube arrays; nanorods; self-orientation;

D O I：

10.1016/S1386-9477(00)00136-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A method to grow regular arrays of oriented carbon nanotubes on silicon substrates is presented. It has been found that porous silicon is an ideal substrate for growing self-oriented carbon nanotubes on large surfaces. The growth mechanism of nanotube arrays has been discussed. The potential applications of carbon nanotube arrays in flat panel display and in synthesizing of other semiconducting nanorods on silicon substrates through the carbon nanotube-confined reaction have also been studied. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：179 / 183

页数：5

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