Understanding Ground-State Quenching in Quantum-Dot Lasers

被引：25

作者：

Roehm, Andre ^{[1
]}

Lingnau, Benjamin ^{[1
]}

Luedge, Kathy ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2015年 / 51卷 / 01期

关键词：

Quantum dots; quantum dot lasers; laser theory; indium gallium arsenide; MU-M; NONLINEAR DYNAMICS; TEMPERATURE; INJECTION;

D O I：

10.1109/JQE.2014.2370793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum-dot lasers can exhibit simultaneous ground-and excited-state lasing. With increasing pump current, a quenching of the ground-state lasing intensity is sometimes observed. The causes for this are investigated, and its dependence on temperature, gain, and electron-hole asymmetry is studied via an analytical approach. A numerical model based on the semiconductor Bloch equations with a set of rate equations for electrons and holes is used for validation. We also investigate the influence of doping and different cavity lengths on the two-state lasing dynamics. We find that ground-state quenching is more common in p-doped, short cavity devices with low gain.

引用

页码：1 / 11

页数：11

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