Understanding Ground-State Quenching in Quantum-Dot Lasers

被引：25

作者：

Roehm, Andre ^{[1
]}

Lingnau, Benjamin ^{[1
]}

Luedge, Kathy ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2015年 / 51卷 / 01期

关键词：

Quantum dots; quantum dot lasers; laser theory; indium gallium arsenide; MU-M; NONLINEAR DYNAMICS; TEMPERATURE; INJECTION;

D O I：

10.1109/JQE.2014.2370793

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum-dot lasers can exhibit simultaneous ground-and excited-state lasing. With increasing pump current, a quenching of the ground-state lasing intensity is sometimes observed. The causes for this are investigated, and its dependence on temperature, gain, and electron-hole asymmetry is studied via an analytical approach. A numerical model based on the semiconductor Bloch equations with a set of rate equations for electrons and holes is used for validation. We also investigate the influence of doping and different cavity lengths on the two-state lasing dynamics. We find that ground-state quenching is more common in p-doped, short cavity devices with low gain.

引用

页码：1 / 11

页数：11

共 36 条

[1] Zero and controllable linewidth enhancement factor in p-doped 1.3 μm quantum dot lasers [J].

Alexander, Ryan R. ;

Childs, David ;

Agarwal, Harsh ;

Groom, Kristian M. ;

Liu, Hui Y. ;

Hopkinson, Mark ;

Hogg, Richard A. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B) :2421-2423

[2] Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers [J].

Cao, Q. ;

Yoon, S. F. ;

Tong, C. Z. ;

Ngo, C. Y. ;

Liu, C. Y. ;

Wang, R. ;

Zhao, H. X. .

APPLIED PHYSICS LETTERS, 2009, 95 (19)

[3] On the physics of semiconductor quantum dots for applications in lasers and quantum optics [J].

Chow, Weng W. ;

Jahnke, Frank .

PROGRESS IN QUANTUM ELECTRONICS, 2013, 37 (03) :109-184

[4] Ground-state power quenching in two-state lasing quantum dot lasers [J].

Gioannini, Mariangela .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (04)

[5] Theory of random population for quantum dots [J].

Grundmann, M ;

Bimberg, D .

PHYSICAL REVIEW B, 1997, 55 (15) :9740-9745

[6] Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-μm InAs-GaAs Quantum-Dot Lasers [J].

Ji, Hai-Ming ;

Yang, Tao ;

Cao, Yu-Lian ;

Xu, Peng-Fei ;

Gu, Yong-Xian ;

Wang, Zhan-Guo .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (07) :0721031-0721034

[7] Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels [J].

Jin, C. Y. ;

Liu, H. Y. ;

Jiang, Q. ;

Hopkinson, M. ;

Wada, O. .

APPLIED PHYSICS LETTERS, 2008, 93 (16)

[8] Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation [J].

Kaptan, Y. ;

Roehm, A. ;

Herzog, B. ;

Lingnau, B. ;

Schmeckebier, H. ;

Arsenijevic, D. ;

Mikhelashvili, V. ;

Schoeps, O. ;

Kolarczik, M. ;

Eisenstein, G. ;

Bimberg, D. ;

Woggon, U. ;

Owschimikow, N. ;

Luedge, K. .

APPLIED PHYSICS LETTERS, 2014, 105 (19)

[9] Effect of carrier dynamics and temperature on two-state lasing in semiconductor quantum dot lasers [J].

Korenev, V. V. ;

Savelyev, A. V. ;

Zhukov, A. E. ;

Omelchenko, A. V. ;

Maximov, M. V. .

SEMICONDUCTORS, 2013, 47 (10) :1397-1404

[10] Analytical approach to the multi-state lasing phenomenon in quantum dot lasers [J].

Korenev, V. V. ;

Savelyev, A. V. ;

Zhukov, A. E. ;

Omelchenko, A. V. ;

Maximov, M. V. .

APPLIED PHYSICS LETTERS, 2013, 102 (11)

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