共 49 条
SOF2 sensing by Rh-doped PtS2 monolayer for early diagnosis of partial discharge in the SF6 insulation device
被引:124
作者:
Li, Peng
[1
,2
]
Hong, Qianying
[1
,2
]
Wu, Tian
[1
,2
]
Cui, Hao
[3
,4
]
机构:
[1] China Three Gorges Univ, Coll Elect Engn New Energy, Yichang 443002, Peoples R China
[2] China Three Gorges Univ, Hubei Prov Engn Technol Res Ctr Power Transmiss L, Yichang 443002, Peoples R China
[3] Southwest Univ Sci & Technol, Key Lab Testing Technol Mfg Proc, Mianyang 621010, Sichuan, Peoples R China
[4] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Chongqing 400044, Peoples R China
关键词:
Rh-PtS2;
monolayer;
SF6 insulation devices;
SOF2;
sensing;
first-principles theory;
TRANSFORMER OIL;
MOS2;
MONOLAYER;
INN MONOLAYER;
PD;
1ST-PRINCIPLES;
CO;
ADSORPTION;
DFT;
AU;
AG;
D O I:
10.1080/00268976.2021.1919774
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
In this paper, Rh-doped S-vacancy PtS2 (Rh-PtS2) monolayer is proposed as a novel sensing material for SOF2 detection in order to evaluate the operation status of SF6 insulation devices. The Rh dopant is stably anchored on the S-vacancy of the PtS2 surface with the binding force (E-b) of -4.65eV. The Rh-PtS2 monolayer behaves as chemisorption upon SOF2 adsorption with adsorption energy (E-ad) of -1.08eV, and the presence of humidity would weaken such adsorption performance, reducing the E-ad to -0.82eV instead. The band structure (BS) analysis implies that the existence of humidity causes cross-sensitivity for the Rh-PtS2 monolayer as the resistance-type sensor, while the optical property analysis indicates the little impact of humidity for that as an optical nano-sensor upon SOF2 detection. Besides, the charge-transfer (Q(T)) in SOF2 adsorption is adjustable via modulating the applied electric strength, giving rise to the tunable and admirable sensing response upon SOF2 sensing with a Rh-PtS2 monolayer based field-effect transistor sensor. Our calculations are meaningful to explore a novel sensing material for SOF2 detection in order to realise the operation status evaluation in SF6 insulation devices.
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页数:8
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