Luminescent properties of GaAsBi/GaAs double quantum well heterostructures

被引：7

作者：

Mazur, Yu. I. ^{[1
]}

Dorogan, V. G. ^{[1
]}

Dias, L. ^{[1
,2
]}

Fan, D. ^{[3
]}

Schmidbauer, M. ^{[4
]}

Ware, M. E. ^{[1
]}

Zhuchenko, Z. Ya. ^{[5
]}

Kurlov, S. S. ^{[5
]}

Tarasov, G. G. ^{[5
]}

Yu, S. -Q. ^{[3
]}

Marques, G. E. ^{[2
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Inst Nanosci & Engn, 731 W Dickson Str, Fayetteville, AR 72701 USA

[2] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil

[3] Univ Arkansas, Dept Elect Engn, Bell Engn 3217, Fayetteville, AR 72701 USA

[4] Laniz Inst Crystal Growth, Max Born Str 2, D-12489 Berlin, Germany

[5] Natl Acad Sci, Inst Semicond Phys, Pr Nauki 45, UA-03028 Kiev, Ukraine

来源：

JOURNAL OF LUMINESCENCE | 2017年 / 188卷

基金：

美国国家科学基金会;

关键词：

ANISOTROPIC FORBIDDEN TRANSITIONS; GROWTH; GAAS1-XBIX;

D O I：

10.1016/j.jlumin.2017.04.025

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaAsBi/GaAs double quantum well (DQW) heterostructures are grown at low temperatures using molecular beam epitaxy without growth interruption and studied by means of high-resolution x-ray diffraction and continuous wave photoluminescence (PL). Line shape analysis of PL spectra measured at various excitation densities allows reveals QW coupling due to tunnelling. It is shown that an efficient PL of GaAs/GaAs1-xBix/GaAs DQWs is significantly more thermally stable than that from a single quantum well (SQW) structure of similar Composition. Such stabilization is described in terms of carrier redistribution between coupled quantum wells and is caused by carrier capture in the QW, thermal emission, and diffusion in the barrier.

引用

页码：209 / 216

页数：8

共 52 条

[1] Decoherence of flux qubits due to scattering of thermal phonons [J].

Albert, Jaroslav ;

Chudnovsky, Eugene M. .

PHYSICAL REVIEW B, 2007, 75 (14)

[2]

Bather G., 1993, PHYS REV B, V47, P9545

[3] The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing [J].

Batool, Z. ;

Hild, K. ;

Hosea, T. J. C. ;

Lu, X. ;

Tiedje, T. ;

Sweeney, S. J. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)

[4] GaBiAs: A material for optoelectronic terahertz devices [J].

Bertulis, K. ;

Krotkus, A. ;

Aleksejenko, G. ;

Pacebutas, V. ;

Adomavicius, R. ;

Molis, G. ;

Marcinkevicius, S. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[5]

Bir G.L., 1976, SYMMETRY STRAIN INDU

[6] Band engineering in dilute nitride and bismide semiconductor lasers [J].

Broderick, C. A. ;

Usman, M. ;

Sweeney, S. J. ;

O'Reilly, E. P. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (09)

[7] Determination of type-I band offsets in GaBixAs1-x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations [J].

Broderick, Christopher A. ;

Harnedy, Patrick E. ;

Ludewig, Peter ;

Bushell, Zoe L. ;

Volz, Kerstin ;

Manning, Robert J. ;

O'Reilly, Eoin P. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (09)

[8] Magneto-optical properties of GaBiAs layers [J].

Carvalho, A. R. H. ;

Gordo, V. Orsi ;

Galeti, H. V. A. ;

Gobato, Y. Galvao ;

de Godoy, M. P. F. ;

Kudrawiec, R. ;

Lemine, O. M. ;

Henini, M. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (07)

[9] Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential [J].

Chen, YH ;

Yang, Z ;

Wang, ZG ;

Bo, X ;

Liang, JB .

PHYSICAL REVIEW B, 1999, 60 (03) :1783-1786

[10] Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs [J].

Deng, Hui-Xiong ;

Li, Jingbo ;

Li, Shu-Shen ;

Peng, Haowei ;

Xia, Jian-Bai ;

Wang, Lin-Wang ;

Wei, Su-Huai .

PHYSICAL REVIEW B, 2010, 82 (19)

← 1 2 3 4 5 6 →