Tunneling current through ultrathin silicon dioxide films under light exposure

被引：16

作者：

Morita, S ^{[1
]}

Shinozaki, A ^{[1
]}

Morita, Y ^{[1
]}

Nishimura, K ^{[1
]}

Okazaki, T ^{[1
]}

Urabe, S ^{[1
]}

Morita, M ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Precis Sci & Technol, Suita, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 11B期

关键词：

silicon dioxide; ultrathin film; tunneling current; photo-tunneling current; metal-oxide-semiconductor diode; thermal oxide; preoxide;

D O I：

10.1143/JJAP.43.7857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling current through ultrathin silicon dioxide films with a thickness of approximately 3.1 nm, formed on n-Si (100) by controlling preoxide growth during heating, is examined using Al/oxide/n-Si structures. Electron tunneling current through the oxide from n-Si to At is decreased and the dielectric breakdown voltage is increased by the preoxide growth control. Electron tunneling current from Al to n-Si is increased by light exposure. The increase in electron tunneling current can be explained by the increase in oxide voltage with an inversion layer formed by photoexcitation.

引用

页码：7857 / 7860

页数：4

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