Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices

被引：40

作者：

Skaja, Katharina ^{[1
,2
]}

Andrae, Michael ^{[1
,2
]}

Rana, Vikas ^{[1
,2
]}

Waser, Rainer ^{[1
,2
,3
]}

Dittmann, Regina ^{[1
,2
]}

Baeumer, Christoph ^{[1
,2
]}

机构：

[1] FZ Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[2] FZ Julich, JARA FIT, D-52425 Julich, Germany

[3] Rhein Westfal TH Aachen, IWE2, Inst Elect Mat, D-52074 Aachen, Germany

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

关键词：

CATHODIC ARC DEPOSITION; CORROSION PROTECTION; TA2O5; CHROMIUM;

D O I：

10.1038/s41598-018-28992-9

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

In this study, we investigated the influence of oxygen non-stoichiometry on the resistive switching performance of tantalum oxide based memristive devices. Thin-films of tantalum oxide were deposited with varying sputter power and oxygen partial pressure. The electroforming voltage was found to decrease with increasing power density or decreased oxygen partial pressure, while the endurance remained stable and the resistance window R-OFF/R-ON was found to increase. In-depth XPS analysis connects these observations to a controllable oxygen sub-stoichiometry in the sputter-deposited films. Our analysis shows that the decrease of the forming voltage results from an increase in carrier density in the as-prepared thin-films, which is induced by the presence of oxygen vacancies.

引用

页数：7