Single-crystal growth of langasite (La3Ga5SiO14) by the vertical Bridgman (VB) method in air and in an Ar atmosphere

被引:24
作者
Taishi, Toshinori [1 ]
Hayashi, Takayuki
Fukami, Tatsuo
Hoshikawa, Keigo
Yonenaga, Ichiro
机构
[1] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Citizen Fine Tech Co Ltd, Miyota 3890207, Japan
[3] Shinshu Univ, Fac Engn, Wakasato, Nagano 3808557, Japan
[4] Shinshu Univ, Fac Educ, Nagano 3808544, Japan
关键词
bridgman technique; growth from melt; single-crystal growth; oxide; piezoelectric materials;
D O I
10.1016/j.jcrysgro.2007.02.025
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Piezoelectric langasite (La3Ga5SiO14, LGS) single crystals were grown by the vertical Bridgman (VB) method in air and in an Ar atmosphere. In the Ar atmosphere, a colorless-transparent crack-free LGS single crystal, 1 in. in diameter, was grown using raw material with a slightly Ga-rich composition, while in air an orange-colored transparent LGS crystal was grown. Any other phases could not be detected in the crystals, which may suggest that only a few Ga atoms evaporated from the melt during the growth in an Ar atmosphere. The resistivity of an LGS crystal grown in an Ar atmosphere was higher than that grown in air. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:4 / 6
页数:3
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