Input-Power-Synchronous Adaptively Biased Wide-Dynamic-Range High-Efficiency Rectifier with Zero-Threshold GaAs HEMTs

被引：0
|
作者：
Yamazaki, Jun [1 ]
Ishikawa, Ryo [1 ]
Honjo, Kazuhiko [1 ]
机构：
[1] Univ Electrocommun, Chofu, Tokyo, Japan
来源：
2020 50TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2020年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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