Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation

被引:32
作者
Yamamoto, Takuya [1 ]
Okano, Yasunori [1 ]
Ujihara, Toru [2 ]
Dost, Sadik [3 ]
机构
[1] Osaka Univ, Dept Mat Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada
关键词
Computer simulation; Fluid flows; Magnetic fields; Heat transfer; Mass transfer; Top seeded solution growth; SOLUTION GROWTH; MAGNETIC-FIELD; SILICON; CRYSTAL; MODEL;
D O I
10.1016/j.jcrysgro.2017.04.016
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A global numerical simulation was performed for the induction heating Top-Seeded Solution Growth (TSSG) process of SiC. Analysis included the furnace and growth melt. The effects of interfacial force due to free surface tension gradient, the RF coil-induced electromagnetic body force, buoyancy, melt free surface deformation, and seed rotation were examined. The simulation results showed that the contributions of free surface tension gradient and the electromagnetic body force to the melt flow are significant. Marangoni convection affects the growth process adversely by making the melt flow downward in the region under the seed crystal. This downward flow reduces carbon flux into the seed and consequently lowers growth rate. The effects of free surface deformation and seed rotation, although positive, are not so significant compared with those of free surface tension gradient and the electromagnetic body force. Due to the small size of the melt the contribution of buoyancy is also small. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:75 / 88
页数:14
相关论文
共 22 条
[11]   Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals [J].
Mercier, Frederic ;
Nishizawa, Shin-ichi .
JOURNAL OF CRYSTAL GROWTH, 2013, 362 :99-102
[12]   Solution growth of SiC from silicon melts: Influence of the alternative magnetic field on fluid dynamics [J].
Mercier, Frederic ;
Nishizawa, Shin-ichi .
JOURNAL OF CRYSTAL GROWTH, 2011, 318 (01) :385-388
[13]   Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts [J].
Mercier, Frederic ;
Nishizawa, Shin-ichi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (03)
[14]   Coupled heat transfer and fluid dynamics modeling of high-temperature SiC solution growth [J].
Mercier, Frederic ;
Dedulle, Jean-Marc ;
Chaussende, Didier ;
Pons, Michel .
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (02) :155-163
[15]   Effect of the capillary meniscus height on the instability of large Prandtl number Czochralski melt flow [J].
Miroshnichenko, E. ;
Kit, E. ;
Gelfgat, A. Yu. .
JOURNAL OF CRYSTAL GROWTH, 2016, 453 :20-26
[16]   Study on silicon melt convection during the RF-FZ crystal growth process II. numerical investigation [J].
Munakata, T ;
Tanasawa, I .
JOURNAL OF CRYSTAL GROWTH, 1999, 206 (1-2) :27-36
[17]   Combined effect of crucible rotation and magnetic field on hydrothermal wave [J].
Takagi, Y. ;
Okano, Y. ;
Minakuchi, H. ;
Dost, S. .
JOURNAL OF CRYSTAL GROWTH, 2014, 385 :72-76
[18]   Analysis of the carbon transport near the growth interface with respect to the rotational speed of the seed crystal during top-seeded solution growth of SiC [J].
Umezaki, Tomonori ;
Koike, Daiki ;
Harada, Shunta ;
Ujihara, Toru .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
[19]   Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC [J].
Umezaki, Tomonori ;
Koike, Daiki ;
Horio, Atsushi ;
Harada, Shunta ;
Ujihara, Toru .
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 :63-66
[20]  
VAN LEER B, 1974, J COMPUT PHYS, V14, P361