Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation

被引:32
作者
Yamamoto, Takuya [1 ]
Okano, Yasunori [1 ]
Ujihara, Toru [2 ]
Dost, Sadik [3 ]
机构
[1] Osaka Univ, Dept Mat Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada
关键词
Computer simulation; Fluid flows; Magnetic fields; Heat transfer; Mass transfer; Top seeded solution growth; SOLUTION GROWTH; MAGNETIC-FIELD; SILICON; CRYSTAL; MODEL;
D O I
10.1016/j.jcrysgro.2017.04.016
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A global numerical simulation was performed for the induction heating Top-Seeded Solution Growth (TSSG) process of SiC. Analysis included the furnace and growth melt. The effects of interfacial force due to free surface tension gradient, the RF coil-induced electromagnetic body force, buoyancy, melt free surface deformation, and seed rotation were examined. The simulation results showed that the contributions of free surface tension gradient and the electromagnetic body force to the melt flow are significant. Marangoni convection affects the growth process adversely by making the melt flow downward in the region under the seed crystal. This downward flow reduces carbon flux into the seed and consequently lowers growth rate. The effects of free surface deformation and seed rotation, although positive, are not so significant compared with those of free surface tension gradient and the electromagnetic body force. Due to the small size of the melt the contribution of buoyancy is also small. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:75 / 88
页数:14
相关论文
共 22 条
[1]   Analysis of Macrostep Formation during Top Seeded Solution Growth of 4H-SiC [J].
Ariyawong, Kanaparin ;
Shin, Yun Ji ;
Dedulle, Jean-Marc ;
Chaussende, Didier .
CRYSTAL GROWTH & DESIGN, 2016, 16 (06) :3231-3236
[2]   The effect of oxygen on the temperature fluctuation of Marangoni convection in a molten silicon bridge [J].
Azami, T ;
Nakamura, S ;
Hibiya, T .
JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) :116-124
[3]   Status of SiC bulk growth processes [J].
Chaussende, D. ;
Wellmann, P. J. ;
Pons, M. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6150-6158
[4]   Solution Growth on Concave Surface of 4H-SiC Crystal [J].
Daikoku, Hironori ;
Kado, Motohisa ;
Seki, Akinori ;
Sato, Kazuaki ;
Bessho, Takeshi ;
Kusunoki, Kazuhiko ;
Kaidou, Hiroshi ;
Kishida, Yutaka ;
Moriguchi, Koji ;
Kamei, Kazuhito .
CRYSTAL GROWTH & DESIGN, 2016, 16 (03) :1256-1260
[5]   AN INTEGRATED PROCESS MODEL FOR THE GROWTH OF OXIDE CRYSTALS BY THE CZOCHRALSKI METHOD [J].
DERBY, JJ ;
ATHERTON, LJ ;
GRESHO, PM .
JOURNAL OF CRYSTAL GROWTH, 1989, 97 (3-4) :792-826
[6]   Temperature distribution in an inductively heated CZ crucible [J].
Du, DX ;
Munakata, T .
JOURNAL OF CRYSTAL GROWTH, 2005, 283 (3-4) :563-575
[7]   Carbon solubility in solid and liquid silicon - A review with reference to eutectic equilibrium [J].
Durand, F ;
Duby, JC .
JOURNAL OF PHASE EQUILIBRIA, 1999, 20 (01) :61-63
[8]   MEASUREMENT OF THERMAL-CONDUCTIVITY OF HELIUM UP TO 2100DEGREEK BY COLUMN METHOD [J].
FAUBERT, FM ;
SPRINGER, GS .
JOURNAL OF CHEMICAL PHYSICS, 1973, 58 (10) :4080-4083
[9]   A FINITE-ELEMENT MODEL FOR INDUCTION-HEATING OF A METAL CRUCIBLE [J].
GRESHO, PM ;
DERBY, JJ .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :40-48
[10]  
Issa R.I., 1985, COMPUT PHYS, V62, P40