Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

被引：31

作者：

Huang, Shesong ^{[1
]}

Niu, Zhichuan ^{[1
]}

Ni, Haiqiao ^{[1
]}

Xiong, Yonghua ^{[1
]}

Zhan, Feng ^{[1
]}

Fang, Zhidan ^{[1
]}

Xia, Jianbai ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

基金：

中国国家自然科学基金;

关键词：

long wavelength; low density; molecular beam epitaxy; quantum dots;

D O I：

10.1016/j.jcrysgro.2006.11.299

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved.

引用

收藏

页码：751 / 754

页数：4

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