Review-Progress in High Performance III-Nitride Micro-Light-Emitting Diodes

被引:148
作者
Wong, Matthew S. [1 ]
Nakamura, Shuji [1 ,2 ]
DenBaars, Steven P. [1 ,2 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
DRY-ETCH DAMAGE; SURFACE RECOMBINATION; PRINTED ASSEMBLIES; HIGH-EFFICIENCY; GAN; LEDS; DEPOSITION; DISPLAYS; LASER; OPTOELECTRONICS;
D O I
10.1149/2.0302001JSS
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The developments of high performance InGaN based micro-light-emitting diodes (mu LEDs) are discussed. We first review the early demonstrations of mu LEDs and the state-of-the-art outstanding achievements on the emerging high-quality display and visible-light communication applications. Due to the miniature dimensions of mu LEDs, the key understandings and the significant device advancements to achieve excellent energy efficiency are addressed. Lastly, two other critical challenges of mu LEDs, namely full-color scheme and mass transfer technique, and their potential solutions are explored for future investigations. (c) The Author(s) 2019. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org.
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页数:8
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