Vertical layer distribution and atomic step height of ultrathin Co films on Cu(001) determined by lattice G-factor analysis

被引:2
作者
Poserow, B [1 ]
Jiang, Q [1 ]
Wang, GC [1 ]
机构
[1] RENSSELAER POLYTECH INST,DEPT PHYS APPL PHYS & ASTRON,TROY,NY 12180
关键词
cobalt; copper; growth; low energy electron diffraction (LEED); metal-metal magnetic thin film structures; single crystal epitaxy;
D O I
10.1016/S0039-6028(97)00381-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The molecular beam epitaxial growth of ultrathin Co films on the Cu(001) surface at room temperature has been monitored in situ through the angular profile measurement of integer order beams using the high resolution low energy electron diffraction (HRLEED) technique. A simple kinematic lattice G-factor analysis of energy dependent angular profiles at a fixed coverage giver the vertical layer distribution of Co films and atomic step height. The vertical layer distribution is consistent with the nearly layer-by-layer growth mode. The atomic step height similar to 1.77 Angstrom is consistent with the structure determined from dynamical LEED calculations. A precaution in the application of the lattice G-factor analysis in heteroepitaxial systems is discussed. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:103 / 109
页数:7
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