Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

被引：181

作者：

Cao, Rongrong ^{[1
,2
]}

Wang, Yan ^{[1
,2
]}

Zhao, Shengjie ^{[1
,2
]}

Yang, Yang ^{[1
,2
]}

Zhao, Xiaolong ^{[1
,2
]}

Wang, Wei ^{[1
,2
]}

Zhang, Xumeng ^{[1
,2
]}

Lv, Hangbing ^{[1
,2
]}

Liu, Qi ^{[1
,2
]}

Liu, Ming ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Hf0.5Zr0.5O2; ferroelectric properties; capping electrode;

D O I：

10.1109/LED.2018.2846570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, effects of top electrodes (TEs) on ferroelectric properties of Hf-0.5 Zr-0.5 O-2 (HZO) thin films are examined systematically. The remnant polarization (P-r) of HZO thin films increases by altering TEs with lower thermal expansions coefficient (alpha). The largest 2P(r) value of 38.72 mu C/cm(2) is observed for W TE with alpha = 4.5 x 10(-6)/K, while the 2P(r) value is only 22.83 mu C/cm(2) for Au TE with alpha = 14.2x10(-6)/K. Meanwhile, coercivefield (E-c) shifts along the electric field axis and the offset is found to be dependent on the difference of workfunctions (WFs) between TE and TiN bottom electrode (BE). E-c shifts toward negative/positive direction, when theWF of TE is larger/smaller (Pt, Pd, Au/W, Al, Ta) than TiN BE. This letter provides an effective way to modulate HfO2-based device performance for different requirements in actual application.

引用

页码：1207 / 1210

页数：4

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