Substrate Integrated Waveguides for mm-wave Functionalized Silicon Interposer

被引：0

作者：

Bertrand, Matthieu ^{[1
]}

Pistono, Emmanuel ^{[2
]}

Acri, Giuseppe ^{[2
]}

Kaddour, Darine ^{[3
]}

Podevin, Florence ^{[2
]}

Puyal, Vincent ^{[4
]}

Wipf, Selin Tolunay ^{[5
]}

Wipf, Christian ^{[5
]}

Wietstruck, Matthias ^{[5
]}

Kaynak, Mehmet ^{[5
]}

Ferrari, Philippe ^{[6
]}

机构：

[1] UPMC Univ Paris 06, Sorbonne Univ, UR2, L2E, Paris, France

[2] Univ Grenoble Alpes, CNRS, Grenoble INP, IMEP LAHC, F-38000 Grenoble, France

[3] Univ Grenoble Alpes, LCIS, F-26902 Valence, France

[4] CEA, LETI, MINATEC Campus, Grenoble, France

[5] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[6] Univ Grenoble Alpes, TIMA, F-38000 Grenoble, France

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

关键词：

SIW; mm-waves; silicon interposer;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents D-band mm-wave SIWs, which are embedded in a high-resistivity silicon interposer. Thanks to the interposer thickness equal to 70 mu m, high-performance SIW were obtained, with measured attenuation constant between 0.4 and 0.6 dB/mm from 110 GHz to 170 GHz. These first results pave the way for the realization of high performance passive circuits and antennas embedded in the interposer. Also, by using a fully shielded waveguide highly insensitive to adjacent waveguiding and radiating structures, this topology provides significant advantages for packaging solutions at mm-wave frequencies. Such a functionalized interposer could offer lower cost, higher electrical performance as compared to standard CMOS technologies.

引用

页码：875 / 878

页数：4

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