Design and Optimization of Collection Efficiency and Conversion Gain of a Buried P-Well SOI Pixel X-ray Detector

被引：0

作者：

Shi, Chen ^{[1
,2
]}

Tian, Li ^{[1
]}

Feng, Songlin ^{[1
]}

Li, Qiliang ^{[2
]}

Wang, Hui ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai 200000, Peoples R China

[2] George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA

来源：

ELECTRONICS | 2017年 / 6卷 / 02期

关键词：

SOI; X-ray detector; collection efficiency; conversion gain; TECHNOLOGY; PERFORMANCE; DEVICES;

D O I：

10.3390/electronics6020026

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Buried P-Well (BPW) technology was used in silicon-on-insulator pixels (SOIPIX) to suppress the back-gate effect, the major challenge in SOIPIX. In this work, we have designed and optimized two novel pixel structures, which are based on different BPW design layouts, to study the carrier collection efficiency and conversion gain of the pixel unit used in SOIPIX X-ray detectors. The first structure has an extended BPW region connected with a P+ node. In the second structure, a separated BPW ring region is formed surrounding the P+ node. Two X-ray sources with different photon energies have been applied in the simulation of excess carrier generation. The results indicated that the first structure had higher collection efficiency while the second structure had a slightly better conversion gain. As a result, the total photoelectric voltage of the first structure is about two times that of the second structure, where low doping concentration (<1 x 10(16) cm(-3)) in the BPW region is preferred. Such a study of design and optimization of BPW technology is very important for applications in SOIPIX detectors.

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