Modeling and Simulation of 2 kV 50 A SiC MOSFET/JBS Power Modules

被引：0

作者：

Chen, Zheng ^{[1
]}

Burgos, Rolando ^{[1
]}

Boroyevich, Dushan ^{[1
]}

Wang, Fred ^{[1
]}

Leslie, Scott ^{[2
]}

机构：

[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, CPES, Blacksburg, VA 24061 USA

[2] Powerex Inc, Youngwood, PA 15697 USA

来源：

EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9 | 2009年

关键词：

Silicon Carbide; MOSFET; Modeling; Simulation;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/Junction-Barrier Schonky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on the Hefner MOSFET model and published experimental data. The device and package models are then combined and used to run circuit simulations of a double-pulse tester. The simulation results obtained provide good insight into the fast switching behavior and parametric dependencies of the paralleled SiC dice, which will aid in the module physical layout and gate driver design, as well as switching and conduction loss analysis.

引用

页码：3249 / +

页数：2

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