AlGaInP-based Micro-LED array with enhanced optoelectrical properties

被引：40

作者：

Han, Sancan ^{[1
]}

Xu, Chenchao ^{[1
]}

Li, Huijin ^{[1
]}

Liu, Shaogang ^{[1
]}

Xu, Huiwen ^{[1
]}

Zhu, Yuankun ^{[1
]}

Fang, Anle ^{[1
]}

Wang, Xianying ^{[1
]}

机构：

[1] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 JunGong Rd, Shanghai 200093, Peoples R China

来源：

OPTICAL MATERIALS | 2021年 / 114卷 / 114期

基金：

中国国家自然科学基金;

关键词：

Micro-LED; Size effect; Sulfur passivation; EQE; INTERNAL QUANTUM EFFICIENCY; SURFACE RECOMBINATION;

D O I：

10.1016/j.optmat.2021.110860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The micro lighting-emitting diode (Micro-LED) array devices have attracted attention due to increasing demand in augmented reality (AR), virtual reality (VR), LIFI light source, and other micro-display applications. However, with the decrease of micro-LED diameter, the performance of micro-LED is severely limited due to the size effect. In the work, the AlGaInP based red micro-LED with diameter ranging from 2 to 16 mu m was prepared to study the size effect of micro-LED array, the array with larger micro-LED diameter show higher external quantum efficiency (EQE), meanwhile, the carrier lifetime decrease with the decreasing of the diameter, which can be explained by more surface states in the micro-LED with smaller diameter. The enhancement of EQE by 2 times has been achieved after surface passivation in (NH4)2Sx solution.

引用

页数：6