AlGaInP-based Micro-LED array with enhanced optoelectrical properties

被引：40
作者：
Han, Sancan [1 ]
Xu, Chenchao [1 ]
Li, Huijin [1 ]
Liu, Shaogang [1 ]
Xu, Huiwen [1 ]
Zhu, Yuankun [1 ]
Fang, Anle [1 ]
Wang, Xianying [1 ]
机构：
[1] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, 516 JunGong Rd, Shanghai 200093, Peoples R China
来源：
OPTICAL MATERIALS | 2021年 / 114卷 / 114期
基金：
中国国家自然科学基金;
关键词：
Micro-LED; Size effect; Sulfur passivation; EQE; INTERNAL QUANTUM EFFICIENCY; SURFACE RECOMBINATION;
D O I：
10.1016/j.optmat.2021.110860
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The micro lighting-emitting diode (Micro-LED) array devices have attracted attention due to increasing demand in augmented reality (AR), virtual reality (VR), LIFI light source, and other micro-display applications. However, with the decrease of micro-LED diameter, the performance of micro-LED is severely limited due to the size effect. In the work, the AlGaInP based red micro-LED with diameter ranging from 2 to 16 mu m was prepared to study the size effect of micro-LED array, the array with larger micro-LED diameter show higher external quantum efficiency (EQE), meanwhile, the carrier lifetime decrease with the decreasing of the diameter, which can be explained by more surface states in the micro-LED with smaller diameter. The enhancement of EQE by 2 times has been achieved after surface passivation in (NH4)2Sx solution.
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页数：6
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