X-ray absorption studies of atomic environments in semiconductor nanostructures

被引：4
作者：
Boscherini, F
机构：
[1] Univ Bologna, Ist Nazl Fis Mat, I-40127 Bologna, Italy
[2] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 199卷
关键词：
X-ray absorption spectroscopy; semiconductors; quantum dots; strain;
D O I：
10.1016/S0168-583X(02)01560-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The use of X-ray absorption fine structure spectroscopy in the investigation of the atomic environment in semiconductor nanostructures is illustrated. After a description of the experimental apparatus two specific examples are reported: the detection of Si-Ge intermixing in Ge quantum dots and the relation between long range elasticity and local distortions in strained InGaAs epilayers. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：169 / 173
页数：5
相关论文
共 18 条
  • [1] Real-space multiple-scattering calculation and interpretation of x-ray-absorption near-edge structure
    Ankudinov, AL
    Ravel, B
    Rehr, JJ
    Conradson, SD
    [J]. PHYSICAL REVIEW B, 1998, 58 (12): : 7565 - 7576
  • [2] Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111)
    Boscherini, F
    Capellini, G
    Di Gaspare, L
    Rosei, F
    Motta, N
    Mobilio, S
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (06) : 682 - 684
  • [3] Ge-Si intermixing in Ge quantum dots on Si
    Boscherini, F
    Capellini, G
    Di Gaspare, L
    De Seta, M
    Rosei, F
    Sgarlata, A
    Motta, N
    Mobilio, S
    [J]. THIN SOLID FILMS, 2000, 380 (1-2) : 173 - 175
  • [4] LENGTH MISMATCH IN RANDOM SEMICONDUCTOR ALLOYS .1. GENERAL-THEORY FOR QUATERNARIES
    CAI, Y
    THORPE, MF
    [J]. PHYSICAL REVIEW B, 1992, 46 (24): : 15872 - 15878
  • [5] Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition
    Capellini, G
    DiGaspare, L
    Evangelisti, F
    Palange, E
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (04) : 493 - 495
  • [6] FILIPPONI A, 1995, PHYS REV B, V52, P1522
  • [7] KELIRES P, COMMUNICATION
  • [8] ATOMIC-SCALE STRUCTURE OF RANDOM SOLID-SOLUTIONS - EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GA1-XINXAS
    MIKKELSEN, JC
    BOYCE, JB
    [J]. PHYSICAL REVIEW LETTERS, 1982, 49 (19) : 1412 - 1415
  • [9] Evolution of the intermixing process in Ge/Si(111) self-assembled islands
    Motta, N
    Rosei, F
    Sgarlata, A
    Capellini, G
    Mobilio, S
    Boscherini, F
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 264 - 268
  • [10] Growth of Ge-Si(111) epitaxial layers: intermixing, strain relaxation and island formation
    Motta, N
    Sgarlata, A
    Calarco, R
    Nguyen, Q
    Cal, JC
    Patella, F
    Balzarotti, A
    De Crescenzi, M
    [J]. SURFACE SCIENCE, 1998, 406 (1-3) : 254 - 263
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