The use of the method of zone recrystallization under a coating for preparing single-crystal films of bismuth-antimony solid solution

被引：8

作者：

Grabov, V. M. ^{[1
]}

Komarov, V. A. ^{[1
]}

Kablukova, N. S. ^{[1
]}

Demidov, E. V. ^{[1
]}

Krushel'nitskii, A. N. ^{[1
]}

机构：

[1] Herzen State Pedag Univ, St Petersburg 191186, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 01期

关键词：

Bismuth; Antimony; Technical Physic Letter; Thermal Deposition; Trigonal Axis;

D O I：

10.1134/S1063785015010058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure, composition homogeneity, and electrical properties of bismuth-antimony films with an antimony content below 15 at % prepared by the method of zone recrystallization under a coating on mica and polyimide substrates have been experimentally analyzed; the results are compared with data on block films of a corresponding composition. It is established that the method used makes it possible to prepare single-crystal (single-block) films of BiSb solid solution on substrates with different structures. The films obtained exhibit no inhomogeneities in the antimony distribution over a film volume. Single-crystal films have a much higher relative magnetoresistance than do block films of the same composition prepared by thermal depositions.

引用

页码：10 / 13

页数：4

共 6 条

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