High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature

被引：50

作者：

Asgari, A. ^{[1
,2
]}

Razi, S. ^{[1
]}

机构：

[1] Univ Tabriz, Appl Phys Res Inst, Photon Elect Grp, Tabriz 51665163, Iran

[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 14期

关键词：

ELECTRONIC-STRUCTURE; HIGH-DETECTIVITY; POLARIZATION; RESPONSIVITY; BAND;

D O I：

10.1364/OE.18.014604

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper we present a novel long wave length infrared quantum dot photodetector. A cubic shaped 6nm GaN quantum dot (QD) within a large 18 nm Al0.2Ga0.8N QD (capping layer) embedded in Al0.8Ga0.2N has been considered as the unit cell of the active layer of the device. Single band effective mass approximation has been applied in order to calculate the QD electronic structure. The temperature dependent behavior of the responsivity and dark current were presented and discussed for different applied electric fields. The capping layer has been proposed to improve upon the dark current of the detector. The proposed device has demonstrated exceptionally low dark current, therefore low noise, and high detectivity. Excellent specific detectivity (D*) up to similar to 3 x 10(8) CmHz(1/2)/W is achieved at room temperature. (C) 2010 Optical Society of America

引用

页码：14604 / 14615

页数：12

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