Grain orientation, texture, and internal stress optically evaluated by micro-Raman spectroscopy

We present a method to experimentally determine the components of stress tensors within grains of multicrystalline materials by micro-Raman spectroscopy. This method is applied to multicrystalline silicon wafers as they are produced for solar cells. Currently, mu-Raman spectroscopy is intensively used to measure stresses in silicon wafers, structures, and devices of known crystallographic orientations. For these cases, the determination of stresses from Raman peak shifts is straightforward. In multicrystalline silicon, however, arbitrary grain orientations complicate the determination of stress tensor components, which depend on the crystallographic orientations of the particular grains. The Raman intensities depend on the polarization direction of the incident and scattered laser light and again on the crystallographic grain orientations. This intensity dependence is used to determine the crystallographic grain orientations. Once the orientation is determined, the components of the stress tensor (with respect to a fixed reference coordinate system-the sample stage), can be calculated numerically from the Raman peak shifts. As examples, we determine (i) the stress components of a nearly plane stress state around the tip of a microcrack and (ii) the stress components at a grain boundary in a multicrystalline silicon wafer. (c) 2007 American Institute of Physics.