Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory

被引：51

作者：

Chen, Po-Hsun ^{[1
]}

Chang, Kuan-Chang ^{[2
]}

Chang, Ting-Chang ^{[1
,3
]}

Tsai, Tsung-Ming ^{[2
]}

Pan, Chih-Hung ^{[2
]}

Chu, Tian-Jian ^{[2
]}

Chen, Min-Chen ^{[1
]}

Huang, Hui-Chun ^{[2
]}

Lo, Ikai ^{[1
]}

Zheng, Jin-Cheng

Sze, Simon M.

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 03期

关键词：

RRAM; electrode; ITO; oxygen-vacancy; HOPPING CONDUCTION; RRAM; MECHANISM; HYDROGEN; ORIGIN;

D O I：

10.1109/LED.2016.2522085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-tin-oxide (ITO) is investigated as the top electrode material in HfO2-based resistive random access memory cells. Experimental results show that in contrast to a metal (Pt) electrode, an ITO electrode provides for self-limiting current flow during the forming and SET processes, so that no compliance limit is necessary. This provides for low-power consumption, high endurance (>10(7) cycles), and short SET/RESET transition times (similar to 50 ns). We propose that this is because ITO is an oxygen-vacancy-rich material, providing bulk storage for oxygen ions rather than surface storage as a metal electrode.

引用

页码：280 / 283

页数：4

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