Electron capture and loss in the scattering of hydrogen and oxygen ions on a Si surface

被引：36
作者：
Maazouz, M
Guillemot, L
Esaulov, VA
O'Connor, DJ
机构：
[1] Univ Paris 11, Collis Atom & Mol Lab, CNRS, Unite Associe, F-91405 Orsay, France
[2] Univ Newcastle, Dept Phys, Callaghan, NSW, Australia
来源：
SURFACE SCIENCE | 1998年 / 398卷 / 1-2期
关键词：
atom-solid interactions; hydrogen; ion-solid interactions; low-energy ion scattering; oxygen; silicon; surface electronic phenomena;
D O I：
10.1016/S0039-6028(98)80010-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We present the results of a study of H(-) and O(-) formation in collisions between 0.5-4 keV hydrogen ions and oxygen ions and atoms with an Si surface. Measurements of scattered negative ion fractions are reported. These are found to be of the same magnitude as for clean metal surfaces like Al. A dynamic velocity-dependent effect in electron capture is observed. A non-resonant, velocity-dependent, charge transfer process, involving localized dangling bond surface states, is invoked io explain this observation. The production of positive ions is discussed. (C) 1998 Published by Elsevier Science B.V.
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收藏
页码：49 / 59
页数：11
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