Maximum entropy mobility spectrum analysis of LPE-grown and anodic oxidated Hg1-xCdxTe(x=0.237)

In this paper, magneto-transport properties of the LPE-grown and anodic oxidated p-type Hg1-xCdxTe(x= 0.237) films have been studied by using maximum entropy mobility spectrum analysis (ME-MSA) technique. It can be found that the high-mobility electron(mu(e) similar to 2 x 10(4) cm(2)/Vs) has considerable contributions to the conduction of anodic oxidated Hg1-xCdxTe(x=0.237) film, but not in LPE-grown Hg1-xCdxTe(x= 0.237) film. The high-mobility electron maintains dominant contributions from 11k to 150k, which can be attributed to two-dimensional electron gas in the inversion layer of anodic oxidated p-type Hg1-xCdxTe(x=0.237) film. In addition, we also observe the nonphysical contributions of low mobility electrons (mu(e)similar to 0.08 x 10(4) cm(2)/Vs) in mobility spectrum of both LPE-grown and anodic oxidated p-type HgCdTe films. The low-mobility electrons, so-called mirror peaks, can be interpreted as a consequence of magnetic freeze-out of holes in vacancy-doped HgCdTe, which disappeared at T=150k.