Reversible order-disorder related band gap changes in Cu2ZnSn(S,Se)4 via post-annealing of solar cells measured by electroreflectance

被引：65

作者：

Kraemmer, Christoph ^{[1
]}

Huber, Christian ^{[1
]}

Zimmermann, Christian ^{[1
]}

Lang, Mario ^{[1
]}

Schnabel, Thomas ^{[2
]}

Abzieher, Tobias ^{[1
,2
]}

Ahlswede, Erik ^{[2
]}

Kalt, Heinz ^{[1
]}

Hetterich, Michael ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Appl Phys, D-76131 Karlsruhe, Germany

[2] Zentrum Sonnenenergie & Wasserstoff Forsch Baden, D-70565 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 26期

关键词：

Stochastic models - Zinc alloys - Stochastic systems - Copper alloys - Binary alloys - Solar cells - Annealing;

D O I：

10.1063/1.4905351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on order-disorder related band gap changes in Cu2ZnSn(S, Se)(4) solar cells which are induced by post-annealing. The band gap changes of the absorber are detected utilizing electroreflectance and analyzed by comparison with predictions of the stochastic Vineyard model. This yields a critical temperature of T-C = 195 degrees C above which the Cu2ZnSn(S, Se)(4) absorber layer is entirely disordered within the Cu-Zn layers of the kesterite unit cell. The temporal evolution of the band gap during annealing shows that the equilibrium value is reached on a timescale in the order of hours, depending on the annealing temperature. In contrast to other experimental techniques, electroreflectance precisely measures the band gap and is not influenced by defect-mediated radiative recombination. (C) 2014 AIP Publishing LLC.

引用

页数：4

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