S and O adsorption on pure and Ge doped Ag(111)

被引：0
作者：
Blomqvist, J
Salo, P
Alatalo, M
机构：
[1] Aalto Univ, Phys Lab, FIN-02015 Espoo, Finland
[2] Lappeenranta Univ Technol, Dept Elect Engn, FIN-53851 Lappeenranta, Finland
来源：
SURFACE SCIENCE | 2004年 / 566卷
基金：
芬兰科学院;
关键词：
adatoms; computer simulations; density functional calculations; oxygen; silver; sulphur; surface electronic phenomena (work function; surface potential; surface states; etc.); surface structure; morphology; roughness; and topography;
D O I：
10.1016/j.susc.2004.06.099
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied the possibility of preventing the sulphur poisoning of silver surfaces by doping them with Ge. Our first principles calculations show that the presence of Ge at the topmost surface layer does not affect the adsorption characteristics of S much, yet Ge helps to bind oxygen much more strongly. We thus predict that Ge doping induces a protective 0 layer which helps to prevent the poisoning caused by sulphur. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：1067 / 1070
页数：4
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