Analysis and Design of a 1-MHz Bidirectional Multi-CLLC Resonant DC-DC Converter With GaN Devices

被引:35
作者
Wang, Yi-Feng [1 ]
Chen, Bo [1 ]
Hou, Yuqi [1 ]
Meng, Zhun [2 ]
Yang, Yixian [1 ]
机构
[1] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
[2] State Grid Power Tianjin Elect Co, Econ Res Inst, Tianjin 300171, Peoples R China
基金
国家重点研发计划;
关键词
Bidirectional dc-dc converter; CLLC; gallium nitride (GaN); multiresonant; zero-voltage switching (ZVS); HEMT;
D O I
10.1109/TIE.2019.2899549
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A 1-MHz half-bridge high-gain multi-CLLC bidirectional resonant converter with (gallium nitride) GaN field effect transistor (FETs) and integrated planar magnetics is proposed in this paper. It presents excellent gain characteristic and high power density, which is very suitable for a distributed energy storage system. The operation principle, topology features, and parameter design method of the converter are discussed in detail. The improved winding method of integrated planar magnetics is also elaborated. And then, a 400-W prototype is established and the corresponding experiments are carried out in 1 MHz. Finally, the accuracy and correctness of the theory are verified and the highest efficiency of the converter can reach 94.3%.
引用
收藏
页码:1425 / 1434
页数:10
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