DEVELOPMENT OF AlGaN/GaN/SiC HIGH-ELECTRON-MOBILITY TRANSISTORS FOR THz DETECTION

被引：0

作者：

Jakstas, V ^{[1
]}

Jorudas, J. ^{[1
]}

Janonis, V ^{[1
]}

Minkevicius, L. ^{[1
]}

Kasalynas, I ^{[1
]}

Prystawko, P. ^{[2
]}

Leszczynski, M. ^{[2
]}

机构：

[1] Ctr Phys Sci & Technol, Sauletekio 3, LT-10257 Vilnius, Lithuania

[2] Inst High Pressure Phys UNIPRESS, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2018年 / 58卷 / 02期

关键词：

SiC; GaN; Schottky diode; high electron mobility transistor; THz detection;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The electronic devices demonstrate an improved performance in comparison with the ones processed on a sapphire substrate. Both the SDs and HEMTs show much smaller leakage current density and a higher I-ON/I-OFF ratio, reaching values down to 3.0 +/- 1.2 mA/cm(2) and up to 70 dB under the reverse electric field of 340 kV/cm, respectively. The higher thermal conductivity of the SiC substrate leads to the increase of steady current and transconductance, and better thermal management of the HEMT devices. In addition, a successful detection of terahertz (THz) waves with the AlGaN/GaN HEMT is demonstrated at room temperature. These results open further routes for the optimization of THz designs which may result in development of novel plasmonic THz devices.

引用

页码：188 / 193

页数：6

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