Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing

被引：6

作者：

Qiao, Zhongliang ^{[1
,2
]}

Tang, Xiaohong ^{[1
]}

Li, Xiang ^{[1
]}

Bo, Baoxue ^{[2
]}

Gao, Xin ^{[2
]}

Qu, Yi ^{[2
]}

Liu, Chongyang ^{[3
]}

Wang, Hong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

[3] Nanyang Technol Univ, Temasek Labs NTU, Singapore 637553, Singapore

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2017年 / 5卷 / 02期

基金：

中国国家自然科学基金; 新加坡国家研究基金会;

关键词：

Semiconductor laser; quantum well intermixing (QWI); impurity free vacancy disordering (IFVD); monolithic fabrication; FABRY-PEROT LASERS; INTEGRATION; DEVICES;

D O I：

10.1109/JEDS.2017.2660531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method. The IFVD-QWI process was carried out by sputtering-depositing SiO2 mask layers on top of the complete InGaAs/GaAs/AlGaAs QW laser structure, emitting at 980 nm wavelength, and followed by a rapid thermal annealing at 880. degrees C for 60 s. The lasing wavelength of the devices fabricated from the intermixed wafer was blue-shifted with the increase of the mask layer thickness. The maximum emission wavelength blue shift of a processed as-cleaved laser reached 112 nm with the output-power more than 1000 mW. By using such an IFVD-QWI technique, multi-wavelength integrated LDs have also been successfully fabricated from a single chip.

引用

页码：122 / 127

页数：6

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