Understanding the effect of vacancy defects on spin transport in CrO2-graphene-CrO2 magnetic tunnel junction

被引:0
作者
Choudhary, Sudhanshu [1 ]
Kaushik, Divya [1 ]
机构
[1] Inst Technol, Sch VLSI Design & Embedded Syst, Kurukshetra 136119, Haryana, India
来源
MODERN PHYSICS LETTERS B | 2016年 / 30卷 / 09期
关键词
Graphene nanosheet; spintronics; magnetic tunnel junction; vacancy defects; half-metallic ferromagnetic electrodes; tunnel magnetoresistance; spin efficiency; GRAPHENE;
D O I
10.1142/S0217984916501025
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper, we investigate the effect of vacancy defects on spin transport in graphene-based magnetic tunnel junction (MTJ). An increase in conductance was seen in vacancy-defected MTJ structure which is in contrast to the results reported in past where a decrease in conductance with vacancy was observed for graphene sheets. This increase in conductance may be due to the use of CrO2 half-metallic ferromagnet (HMF) electrodes instead of metallic or ferromagnet (FM) electrodes. Furthermore, high tunnel magnetoresistance (TMR) similar to 99% and perfect spin filtration was obtained for both vacancy-defected and no-defect (pristine) MTJ structures. The TMR in vacancy-defected structure is seen to decrease by 6.2% and by 13% at bias voltages of 1.2V and 1.4V, when compared to TMR in no-defect MTJ structure.
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页数:7
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