First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

被引：6

作者：

Samipour, Azam ^{[1
]}

Dideban, Daryoosh ^{[1
]}

Heidari, Hadi ^{[2
]}

机构：

[1] Univ Kashan, Inst Nanosci & Nanotechnol, Kashan, Iran

[2] Univ Glasgow, James Watt Sch Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2019年 / 8卷 / 12期

关键词：

MAGNETIC-PROPERTIES; GRAPHENE; DRAIN; PERFORMANCE; SILICENE; UNDERLAP; GEOMETRY; IMPACT; WIDTH; TFET;

D O I：

10.1149/2.0021912jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors (TFETs) is examined. The simulations are performed using the combination of density functional theory (DFT) and non-equilibrium Green's function (NEGF) formalism. It was observed that using high-k dielectric gate material increases the ON-state current while the combination of hetero-dielectric gate material and gate-drain underlap suppresses the ambipolar current and improves the ON-state current. In addition, the effect of various hetero-junctions in the source region on the performance of GeNR-TFET was investigated. Due to the dependency between the width and energy bandgap in GeNR, utilizing a small bandgap in the source improves ON-state current and its ambipolar behavior. (c) 2019 The Electrochemical Society.

引用

页码：M111 / M117

页数：7

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