Nanomechanical, structural, and transport properties of Bi3Se2Te thin films

被引：19

作者：

Phuoc Huu Le ^{[1
,2
]}

Chiu, Shao-Pin ^{[3
]}

Jian, Sheng-Rui ^{[4
]}

Luo, Chih Wei ^{[1
,5
]}

Lin, Jiunn-Yuan ^{[3
]}

Lin, Juhn-Jong ^{[1
,3
]}

Wu, Kaung Hsiung ^{[1
]}

Gospodinov, M. ^{[6
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Can Tho Univ Med & Pharm, Fac Basic Sci, 179 Nguyen Van Cu St, Can Tho, Vietnam

[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan

[4] I Shou Univ, Dept Mat Sci & Engn, Kaohsiung 840, Taiwan

[5] Minist Sci & Technol, Taiwan Consortium Emergent Crystalline Mat, Taipei 10601, Taiwan

[6] Bulgarian Acad Sci, Inst Solid State Phys, Blvd Lenin 72, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 679卷

关键词：

Topological insulator; Bi3Se2Te; Nanoindentation; Weak antilocalization (WAL); Pulsed laser deposition (PLD); THERMOELECTRIC PROPERTIES; SURFACE-STATES; MECHANICAL CHARACTERIZATION; QUANTUM OSCILLATIONS; DIRAC FERMIONS; NANOINDENTATION; INSULATOR; MAGNETORESISTANCE; DEFORMATION; COATINGS;

D O I：

10.1016/j.jallcom.2016.03.226

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

New ternary phase of Bi3Se2Te thin films were successfully grown through pulsed laser deposition with a single Bi2Se2Te crystal as the target. Bi-rich and Se-and Te-deficient compositions deposited at a substrate temperature (T-s) of 250 degrees C and helium gas pressures (P-He) ranging from 2.0 x 10(-5) to 6.5 x 10(-1) Torr aided the formation of the dominant Bi-rich phase: Bi3Se2Te. The films were grown epitaxially on Al2O3 (001) substrates with Bi3Se2Te [001]//Al2O3 [001] and Bi3Se2Te [110]//Al2O3 [210]. An increase in P-He remarkably enhanced the hardness and Young's modulus of the films, primarily because of the decrease in nanograin size, following the HallePetch relationship. Moreover, the Bi3Se2Te films present linear magnetoresistance under a high perpendicular magnetic field (B >= 4 T) and twodimensional weak antilocalization effect under a low B (+/- 1 T) which may be attributed to topological insulator surface state (TSS). Clearly, further theoretical calculations and experiments are needed to confirm the suggested interpretation. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：350 / 357

页数：8

共 58 条

[1] Quantum linear magnetoresistance; solution of an old mystery [J].