A 0.2-W heterostructure barrier varactor frequency tripler at 113 GHz

被引：27

作者：

Vukusic, Josip ^{[1
]}

Bryllert, Tomas ^{[1
]}

Emadi, T. Arezoo ^{[1
]}

Sadeghi, Mahdad ^{[1
]}

Stake, Jan ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 05期

关键词：

frequency multiplier; heterostructure barrier varactor (HBV); high-power operation; millimeter-wave devices; semiconductor diodes; terahertz source; thermal management;

D O I：

10.1109/LED.2007.895376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting, RF measurements, the maximum output power was 195 mW at 113 GHz, With a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%.

引用

页码：340 / 342

页数：3

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